THE DEVELOPMENT AND STUDY OF STRUCTURAL AND ELECTRICAL PROPERTIES OF HIGH K ELECTRIC CONSTANT OXIDES FOR APPLICATION IN MICROELECTRONIC DEVICES

Ref.No: 61184800
Start date: 28.12.2005
End date: 30.06.2009
Approval date: 14.12.2007
Department: ELECTRICAL & COMPUTER ENGINEERING
Sector: ELECTROMAGNETICS, ELECTROOPTICS AND ELECTRONIC MATERIAL
Financier: ΠΕΝΕΔ 2003, G.G.E.T.
Budget: 5.300,00 €
Scientific Responsible: Prof. DIMITRIOS TSAMAKIS
Email: dtsamak@central.ntua.gr
Description: THE PURPOSES WHICH WILL BE DEFINED IN THE PROPOSED PROGRAM ARE THE FOLLOWING TWO: THE STUDY OF THE OXIDES HALFNIUM AND CERIUM IN ORDER TO FIND THE MOST SUITABLE ELEMENT POSSIBLE TO REPLACE SILICON IN TRANSISTOR TECHNOLOGY . AND STANDARDIZATION OF ......
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