Ref.No: 65174500
Start date: 23.01.2009
End date: 22.07.2011
Approval date: 08.05.2009
Department: ELECTRICAL & COMPUTER ENGINEERING
Sector: ELECTROMAGNETICS, ELECTROOPTICS AND ELECTRONIC MATERIAL
Financier: ΒΑΣΙΚΗ ΕΡΕΥΝΑ, EIDIKOS LOG/MOS EMP
Budget: 15.000,00 €
Scientific Responsible: Prof. XANTHAKIS
Email: jxanthak@central.ntua.gr
Description: THE PROJECT AIMS AT DEVELOPING PHYSICAL MODELS OF CHARGE TRANSPORT IN THE INTERFACE OF III-V SEMICONDUCTORS WITH HFO2 IN ORDER TO EXTRACT THE CURRENT CHARACTERISTICS OF NEW TRANSISTORS WITH GaAS CHANNELS OF LENGTH 22NM. DUE TO THE SHORT CHANNEL LENGTH Q
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