| Ref.No: | 65174500 |
| Start date: | 23.01.2009 |
| End date: | 22.07.2011 |
| Approval date: | 08.05.2009 |
| Department: | ELECTRICAL & COMPUTER ENGINEERING |
| Sector: | ELECTROMAGNETICS, ELECTROOPTICS AND ELECTRONIC MATERIAL |
| Financier: | ΒΑΣΙΚΗ ΕΡΕΥΝΑ, EIDIKOS LOG/MOS EMP |
| Budget: | 15.000,00 € |
| Scientific Responsible: | Prof. XANTHAKIS |
| Email: | jxanthak@central.ntua.gr |
| Description: | THE PROJECT AIMS AT DEVELOPING PHYSICAL MODELS OF CHARGE TRANSPORT IN THE INTERFACE OF III-V SEMICONDUCTORS WITH HFO2 IN ORDER TO EXTRACT THE CURRENT CHARACTERISTICS OF NEW TRANSISTORS WITH GaAS CHANNELS OF LENGTH 22NM. DUE TO THE SHORT CHANNEL LENGTH Q |
