DEVELOPMENT, CHARACTERIZATION AND STUDY OF Ge NANOCRYSTALS AT Si/SiO2

Ref.No: 68063000
Start date: 08.11.2002
End date: 31.12.2007
Approval date: 02.07.2004
Department: ELECTRICAL & COMPUTER ENGINEERING
Sector: ELECTROMAGNETICS, ELECTROOPTICS AND ELECTRONIC MATERIAL
Financier: ΕΠΕΑΕΚ II, U.P.E.P.TH
Budget: 31.714,00 €
Scientific Responsible: Prof. DIMITRIOS TSAMAKIS
Email: dtsamak@central.ntua.gr
Description: THE TARGET OF THIS PROPOSAL IS THE GROWTH OF HIGH RESISTIVITY AND UNIFORM SIZE Ge NANOCRYSTALS IN THE Si/SiO2 INTERFACE OF MOS STRUCTURES.