| Ref.No: | 68063000 |
| Start date: | 08.11.2002 |
| End date: | 31.12.2007 |
| Approval date: | 02.07.2004 |
| Department: | ELECTRICAL & COMPUTER ENGINEERING |
| Sector: | ELECTROMAGNETICS, ELECTROOPTICS AND ELECTRONIC MATERIAL |
| Financier: | ΕΠΕΑΕΚ II, U.P.E.P.TH |
| Budget: | 31.714,00 € |
| Scientific Responsible: | Prof. DIMITRIOS TSAMAKIS |
| Email: | dtsamak@central.ntua.gr |
| Description: | THE TARGET OF THIS PROPOSAL IS THE GROWTH OF HIGH RESISTIVITY AND UNIFORM SIZE Ge NANOCRYSTALS IN THE Si/SiO2 INTERFACE OF MOS STRUCTURES. |
